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| IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS(R)-T Power-Transistor Features * N-channel - Logic Level - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested * ESD Class 2 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 7.6 80 V m A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-88128 SP0000-88131 SP0000-88127 Marking 3N06L08 3N06L08 3N06L08 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 C T C=25 C I D=40 A Value 80 61 320 170 55 16 105 -55 ... +175 55/175/56 mJ V V W C Unit A Rev. 1.0 page 1 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=55 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=29 A V GS=5 V, I D=29 A, SMD version V GS=10 V, I D=43 A V GS=10 V, I D=43 A, SMD version 55 1.2 1.7 0.01 2.2 1 A V 1.4 62 62 40 K/W Values typ. max. Unit - 1 1 11.5 11.2 6.5 6.2 100 100 14.2 13.9 7.9 7.6 nA m Rev. 1.0 page 2 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s 0.6 0.9 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=11 V, I D=80 A, V GS=0 to 10 V 34 16 89 4.9 134 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=3.5 V GS=0 V, V DS=25 V, f =1 MHz 6475 812 775 16 35 39 25 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 45 - ns Reverse recovery charge2) 1) Q rr - 53 - nC Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 86 A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. See diagrams 12 and 13. Qualified at -5V and +16V. 3) 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 1 Power dissipation P tot = f(T C); V GS 4 V 2 Drain current I D = f(T C); V GS 4 V 120 100 100 80 80 60 P tot [W] 60 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 40 20 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 limited by on-state resistance 10 s 1 s 100 0.5 100 1 ms 100 s Z thJC [K/W] 0.1 I D [A] 10-1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10 -3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 160 10 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 16 140 120 14 5V 12 5V R DS(on) [m] 100 I D [A] 80 60 40 20 0 0 1 2 3 4 5 6 4.5 V 10 6V 8 8V 4V 10 V 3.5 V 3V 6 4 0 50 100 150 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 4 V parameter: T j 160 140 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 13 11 120 100 -55 C R DS(on) [m] 6 25 C 9 I D [A] 80 60 40 175 C 7 5 20 0 0 1 2 3 4 5 3 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 3 104 Ciss 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 2.5 Coss 2 V GS(th) [V] C [pF] 1.5 55A 550A 103 Crss 1 0.5 0 -60 -20 20 60 100 140 180 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I AV = f(t AV) parameter: T j(start) 100 25C 102 100C I AV [A] I F [A] 150C 10 101 175 C 25 C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 13 Typical avalanche Energy E AS = f(T j) parameter: I D 400 350 300 60 250 66 64 20 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 62 E AS [mJ] 30 A V BR(DSS) [V] 50 100 150 200 58 56 54 52 200 40 A 150 100 50 50 0 0 48 46 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 11 V 44 V 16 Gate charge waveforms V GS Qg 10 8 V GS [V] 6 4 2 Q gate Q gs 0 50 100 150 200 0 Q gd Q gate [nC] Rev. 1.0 page 7 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Published by Infineon Technologies AG St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-09-16 |
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